IPW65R060CM8XKSA1 Infineon Technologies
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.59 EUR |
| 10+ | 6.86 EUR |
| 100+ | 5.56 EUR |
| 480+ | 4.93 EUR |
| 1200+ | 4.22 EUR |
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Technische Details IPW65R060CM8XKSA1 Infineon Technologies
Description: IPW65R060CM8XKSA1, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 16.7A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 440µA, Supplier Device Package: PG-TO247-3-U06, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2462 pF @ 400 V.
Weitere Produktangebote IPW65R060CM8XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IPW65R060CM8XKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 650V 45A |
Produkt ist nicht verfügbar |
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| IPW65R060CM8XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 45A |
Produkt ist nicht verfügbar |
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IPW65R060CM8XKSA1 | Hersteller : Infineon Technologies |
Description: IPW65R060CM8XKSA1 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.7A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 440µA Supplier Device Package: PG-TO247-3-U06 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2462 pF @ 400 V |
Produkt ist nicht verfügbar |