IPW65R065C7XKSA1 Infineon Technologies
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 9.12 EUR |
| 18+ | 7.82 EUR |
| 50+ | 6.93 EUR |
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Technische Details IPW65R065C7XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 33A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V, Power Dissipation (Max): 171W (Tc), Vgs(th) (Max) @ Id: 4V @ 850µA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V.
Weitere Produktangebote IPW65R065C7XKSA1 nach Preis ab 5.81 EUR bis 11.81 EUR
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IPW65R065C7XKSA1 | Hersteller : Infineon Technologies |
 MOSFETs HIGH POWER_NEW |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R065C7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R065C7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R065C7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R065C7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IPW65R065C7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IPW65R065C7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Power dissipation: 171W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW65R065C7XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 33A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4V @ 850µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPW65R065C7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Power dissipation: 171W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |