IPW65R080CFDAFKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 240+ | 7.06 EUR |
| 480+ | 6.31 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
240 Stücke
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Technische Details IPW65R080CFDAFKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 43.3A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V, Power Dissipation (Max): 391W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.76mA, Supplier Device Package: PG-TO247-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote IPW65R080CFDAFKSA1 nach Preis ab 7.78 EUR bis 18.24 EUR
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IPW65R080CFDAFKSA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
auf Bestellung 646 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R080CFDAFKSA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
auf Bestellung 646 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R080CFDAFKSA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R080CFDAFKSA1 | Infineon Technologies |
MOSFETs N-Ch 650V 43.3A TO247-3 |
auf Bestellung 1155 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R080CFDAFKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 43.3A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V Power Dissipation (Max): 391W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.76mA Supplier Device Package: PG-TO247-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 100 V Qualification: AEC-Q101 |
auf Bestellung 605 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPW65R080CFDAFKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
auf Bestellung 646 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 10.01 EUR |
| IPW65R080CFDAFKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
auf Bestellung 646 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 10.01 EUR |
| IPW65R080CFDAFKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 13.45 EUR |
| 16+ | 11.29 EUR |
| IPW65R080CFDAFKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 650V 43.3A TO247-3
MOSFETs N-Ch 650V 43.3A TO247-3
auf Bestellung 1155 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.67 EUR |
| 10+ | 9.76 EUR |
| 100+ | 8.23 EUR |
| 480+ | 7.91 EUR |
| IPW65R080CFDAFKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 43.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 43.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 605 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.24 EUR |
| 30+ | 10.66 EUR |
| 60+ | 9.76 EUR |
| 120+ | 9 EUR |
| 510+ | 7.78 EUR |