| Anzahl | Preis |
|---|---|
| 1+ | 6.62 EUR |
| 10+ | 6.25 EUR |
| 25+ | 3.87 EUR |
| 100+ | 3.82 EUR |
| 240+ | 3.7 EUR |
| 480+ | 2.73 EUR |
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Technische Details IPW65R155CFD7XKSA1 Infineon Technologies
Description: HIGH POWER_NEW, Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO247-3, Vgs(th) (Max) @ Id: 4.5V @ 320µA, Power Dissipation (Max): 77W (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IPW65R155CFD7XKSA1 nach Preis ab 3.65 EUR bis 7.92 EUR
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IPW65R155CFD7XKSA1 | Infineon Technologies |
 Description: HIGH POWER_NEWInput Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 4.5V @ 320µA Power Dissipation (Max): 77W (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPW65R155CFD7XKSA1 |
|
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.92 EUR |
| 30+ | 4.42 EUR |
| 120+ | 3.65 EUR |