IPW65R280C6FKSA1 Infineon Technologies
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 215+ | 2.59 EUR |
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Technische Details IPW65R280C6FKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 440µA, Supplier Device Package: PG-TO247-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V.
Weitere Produktangebote IPW65R280C6FKSA1 nach Preis ab 2.59 EUR bis 2.60 EUR
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IPW65R280C6FKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 236 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R280C6FKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 13.8A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO247-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R280C6FKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPW65R280C6FKSA1 - IPW65R280 650V AND 700V COOLMOS N-CHANN tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 466 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R280C6FKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| IPW65R280C6FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
IPW65R280C6FKSA1 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPW65R280C6FKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 13.8A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO247-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPW65R280C6FKSA1 | Hersteller : Infineon Technologies |
MOSFET LOW POWER_LEGACY |
Produkt ist nicht verfügbar |