IPW80R290C3A

IPW80R290C3A Infineon Technologies


Infineon-IPW80R290C3A-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663e7d4c5e3222 Hersteller: Infineon Technologies
Description: N-CHANNEL AUTOMOTIVE MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Qualification: AEC-Q101
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Technische Details IPW80R290C3A Infineon Technologies

Description: N-CHANNEL AUTOMOTIVE MOSFET, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 1mA, Supplier Device Package: PG-TO247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V, Qualification: AEC-Q101.

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IPW80R290C3A IPW80R290C3A Hersteller : Infineon Technologies Infineon-IPB90R340C3-DS-v02_00-en-780444.pdf MOSFET AUTOMOTIVE
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