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IPWS65R035CFD7AXKSA1

IPWS65R035CFD7AXKSA1 Infineon Technologies


Infineon_IPWS65R035CFD7A_DataSheet_v02_01_EN-3363034.pdf Hersteller: Infineon Technologies
MOSFETs AUTOMOTIVE_COOLMOS
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Technische Details IPWS65R035CFD7AXKSA1 Infineon Technologies

Description: MOSFET N-CH 650V 63A TO247-3-41, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V, Power Dissipation (Max): 305W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.79mA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.

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IPWS65R035CFD7AXKSA1 Hersteller : Infineon Technologies infineon-ipws65r035cfd7a-datasheet-v02_01-en.pdf N-Channel MOSFET Transistor
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IPWS65R035CFD7AXKSA1 IPWS65R035CFD7AXKSA1 Hersteller : Infineon Technologies Infineon-IPWS65R035CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01730e4a600f28f9 Description: MOSFET N-CH 650V 63A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH