IPWS65R050CFD7AXKSA1 Infineon Technologies
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 14.56 EUR |
| 10+ | 11.74 EUR |
| 25+ | 8.34 EUR |
| 100+ | 7.74 EUR |
| 240+ | 7.71 EUR |
| 480+ | 7.23 EUR |
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Technische Details IPWS65R050CFD7AXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 45A TO247-3-41, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.24mA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V.
Weitere Produktangebote IPWS65R050CFD7AXKSA1 nach Preis ab 18.78 EUR bis 21.33 EUR
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IPWS65R050CFD7AXKSA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 650V 45A TO247-3-41Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V |
auf Bestellung 81 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPWS65R050CFD7AXKSA1 | Hersteller : Infineon Technologies |
N-Channel MOSFET Transistor |
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