IPWS65R050CFD7AXKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 16.24 EUR |
| 10+ | 9.61 EUR |
| 100+ | 8.59 EUR |
| 480+ | 8.1 EUR |
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Technische Details IPWS65R050CFD7AXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 45A TO247-3-41, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO247-3-41, Vgs(th) (Max) @ Id: 4.5V @ 1.24mA, Power Dissipation (Max): 227W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V.
Weitere Produktangebote IPWS65R050CFD7AXKSA1 nach Preis ab 18.78 EUR bis 21.33 EUR
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IPWS65R050CFD7AXKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 650V 45A TO247-3-41Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3-41 Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V |
auf Bestellung 81 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPWS65R050CFD7AXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 45A TO247-3-41
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Description: MOSFET N-CH 650V 45A TO247-3-41
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.33 EUR |
| 10+ | 18.78 EUR |