IPZ40N04S58R4ATMA1 Infineon Technologies
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 125+ | 1.16 EUR |
| 165+ | 0.85 EUR |
| 191+ | 0.7 EUR |
| 200+ | 0.68 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.44 EUR |
| 5000+ | 0.33 EUR |
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Technische Details IPZ40N04S58R4ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 40A 8TSDSON-32, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 10µA, Supplier Device Package: PG-TSDSON-8-32, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 771 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPZ40N04S58R4ATMA1 nach Preis ab 0.41 EUR bis 1.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPZ40N04S58R4ATMA1 | Hersteller : Infineon Technologies |
 MOSFETs MOSFET_(20V 40V) |
auf Bestellung 3849 Stücke: Lieferzeit 10-14 Tag (e) |
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IPZ40N04S58R4ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 40A 8TSDSON-32 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 10µA Supplier Device Package: PG-TSDSON-8-32 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 771 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1322 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPZ40N04S58R4ATMA1 | Hersteller : Infineon |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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IPZ40N04S58R4ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 40A Automotive AEC-Q101 8-Pin TSDSON EP T/R |
Produkt ist nicht verfügbar |
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IPZ40N04S58R4ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 40A Automotive AEC-Q101 8-Pin TSDSON EP T/R |
Produkt ist nicht verfügbar |
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IPZ40N04S58R4ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 40A Automotive 8-Pin TSDSON EP T/R |
Produkt ist nicht verfügbar |
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IPZ40N04S58R4ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 40A 8TSDSON-32 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 10µA Supplier Device Package: PG-TSDSON-8-32 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 771 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |