IPZ40N04S58R4ATMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 125+ | 1.39 EUR |
| 165+ | 1.05 EUR |
| 191+ | 0.88 EUR |
| 200+ | 0.86 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.58 EUR |
| 5000+ | 0.45 EUR |
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Technische Details IPZ40N04S58R4ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 40A 8TSDSON-32, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 10µA, Supplier Device Package: PG-TSDSON-8-32, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 771 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPZ40N04S58R4ATMA1 nach Preis ab 0.48 EUR bis 2.31 EUR
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IPZ40N04S58R4ATMA1 | Infineon Technologies |
 MOSFETs MOSFET_(20V 40V) |
auf Bestellung 8222 Stücke: Lieferzeit 10-14 Tag (e) |
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IPZ40N04S58R4ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 40A 8TSDSON-32 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 10µA Supplier Device Package: PG-TSDSON-8-32 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 771 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2872 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPZ40N04S58R4ATMA1 | Infineon |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPZ40N04S58R4ATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
MOSFETs MOSFET_(20V 40V)
auf Bestellung 8222 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.87 EUR |
| 10+ | 1.21 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.55 EUR |
| 5000+ | 0.48 EUR |
| IPZ40N04S58R4ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 40A 8TSDSON-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 771 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 40A 8TSDSON-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 771 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2872 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.31 EUR |
| 15+ | 1.45 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.68 EUR |
| 2000+ | 0.62 EUR |
| IPZ40N04S58R4ATMA1 |
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Hersteller: Infineon
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)