IPZ40N04S5L-2R8 Infineon Technologies
auf Bestellung 4976 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 90+ | 1.63 EUR |
| 100+ | 1.51 EUR |
| 250+ | 1.39 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.2 EUR |
| 2500+ | 1.11 EUR |
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Technische Details IPZ40N04S5L-2R8 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 40A, Power dissipation: 71W, Case: PG-TSDSON-8, Gate-source voltage: ±16V, On-state resistance: 3.8mΩ, Mounting: SMD, Gate charge: 52nC, Kind of channel: enhancement, Technology: OptiMOS™ 5, Application: automotive industry.
Weitere Produktangebote IPZ40N04S5L-2R8
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IPZ40N04S5L-2R8 | Hersteller : Infineon Technologies |
 MOSFET MOSFET_(20V 40V) |
Produkt ist nicht verfügbar |
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IPZ40N04S5L-2R8 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 71W Case: PG-TSDSON-8 Gate-source voltage: ±16V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 52nC Kind of channel: enhancement Technology: OptiMOS™ 5 Application: automotive industry |
Produkt ist nicht verfügbar |