IPZ40N04S5L-2R8 Infineon Technologies
auf Bestellung 4976 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 90+ | 1.6 EUR |
| 100+ | 1.47 EUR |
| 250+ | 1.36 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.17 EUR |
| 2500+ | 1.09 EUR |
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Technische Details IPZ40N04S5L-2R8 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8, Case: PG-TSDSON-8, Mounting: SMD, Type of transistor: N-MOSFET, Technology: OptiMOS™ 5, Polarisation: unipolar, Gate charge: 52nC, On-state resistance: 3.8mΩ, Drain current: 40A, Gate-source voltage: ±16V, Power dissipation: 71W, Drain-source voltage: 40V, Application: automotive industry, Kind of channel: enhancement.
Weitere Produktangebote IPZ40N04S5L-2R8
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IPZ40N04S5L-2R8 | Hersteller : Infineon Technologies |
 MOSFET MOSFET_(20V 40V) |
Produkt ist nicht verfügbar |
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IPZ40N04S5L-2R8 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Gate charge: 52nC On-state resistance: 3.8mΩ Drain current: 40A Gate-source voltage: ±16V Power dissipation: 71W Drain-source voltage: 40V Application: automotive industry Kind of channel: enhancement |
Produkt ist nicht verfügbar |