IPZ40N04S5L-2R8 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 71W
Application: automotive industry
Polarisation: unipolar
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5000 Stücke
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Technische Details IPZ40N04S5L-2R8 INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8, Technology: OptiMOS™ 5, Mounting: SMD, Case: PG-TSDSON-8, Power dissipation: 71W, Application: automotive industry, Polarisation: unipolar, Gate charge: 52nC, Kind of channel: enhanced, Gate-source voltage: ±16V, Drain-source voltage: 40V, Drain current: 40A, On-state resistance: 3.8mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 5000 Stücke.
Weitere Produktangebote IPZ40N04S5L-2R8
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IPZ40N04S5L-2R8 | Hersteller : Infineon Technologies |
MOSFET MOSFET_(20V 40V) |
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IPZ40N04S5L-2R8 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 71W Application: automotive industry Polarisation: unipolar Gate charge: 52nC Kind of channel: enhanced Gate-source voltage: ±16V Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |