Technische Details IPZ60R037P7XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 76A TO247-4, Power Dissipation (Max): 255W (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO247-4, Vgs(th) (Max) @ Id: 4V @ 1.48mA.
Weitere Produktangebote IPZ60R037P7XKSA1 nach Preis ab 5.8 EUR bis 26.12 EUR
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IPZ60R037P7XKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 600V 76A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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IPZ60R037P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 76A TO247-4 Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO247-4 Vgs(th) (Max) @ Id: 4V @ 1.48mA |
auf Bestellung 938 Stücke: Lieferzeit 10-14 Tag (e) |
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IPZ60R037P7XKSA1 | Infineon Technologies |
MOSFET |
auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPZ60R037P7XKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 76A 4-Pin(4+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 76A 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 6.49 EUR |
| 28+ | 5.8 EUR |
| IPZ60R037P7XKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 76A TO247-4
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Description: MOSFET N-CH 650V 76A TO247-4
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4V @ 1.48mA
auf Bestellung 938 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 11.41 EUR |
| IPZ60R037P7XKSA1 |
|
Hersteller: Infineon Technologies
MOSFET
MOSFET
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.12 EUR |
| 10+ | 23.62 EUR |
| 100+ | 19.56 EUR |
| 240+ | 19.54 EUR |