IPZA60R080P7XKSA1 Infineon Technologies
auf Bestellung 8640 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 240+ | 7.67 EUR |
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Technische Details IPZA60R080P7XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 37A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V, Power Dissipation (Max): 129W (Tc), Vgs(th) (Max) @ Id: 4V @ 590µA, Supplier Device Package: PG-TO247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V.
Weitere Produktangebote IPZA60R080P7XKSA1 nach Preis ab 5.82 EUR bis 13.41 EUR
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IPZA60R080P7XKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 37A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
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IPZA60R080P7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 37A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
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IPZA60R080P7XKSA1 | Hersteller : Infineon Technologies |
MOSFET HIGH POWER_NEW |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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IPZA60R080P7XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 37A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V Power Dissipation (Max): 129W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: PG-TO247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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IPZA60R080P7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZA60R080P7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 37A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IPZA60R080P7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |