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IPZA60R099CM8XKSA1

IPZA60R099CM8XKSA1 Infineon Technologies


DS_IPZA60R099CM8_2_0.pdf Hersteller: Infineon Technologies
Description: IPZA60R099CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 230 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+4.28 EUR
60+3.88 EUR
90+3.67 EUR
150+3.44 EUR
210+3.31 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPZA60R099CM8XKSA1 Infineon Technologies

Description: IPZA60R099CM8XKSA1, Packaging: Tape & Reel (TR), Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 260µA, Supplier Device Package: PG-TO247-4-U02, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V.

Weitere Produktangebote IPZA60R099CM8XKSA1 nach Preis ab 2.92 EUR bis 7.76 EUR

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IPZA60R099CM8XKSA1 IPZA60R099CM8XKSA1 Hersteller : Infineon Technologies DS_IPZA60R099CM8_2_0.pdf Description: IPZA60R099CM8XKSA1
Packaging: Cut Tape (CT)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.66 EUR
10+5.08 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPZA60R099CM8XKSA1 IPZA60R099CM8XKSA1 Hersteller : Infineon Technologies Infineon_IPZA60R099CM8_DataSheet_v02_00_EN-3574109.pdf MOSFETs 600V CoolMOS CM8 Power Transistor
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.76 EUR
10+5.14 EUR
100+4.08 EUR
480+3.63 EUR
1200+3.1 EUR
2640+2.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH