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IQD005N04NM6SCATMA1

IQD005N04NM6SCATMA1 Infineon Technologies

Infineon-IQD005N04NM6SC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c914a3ac8019169effe56544b Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+2.51 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IQD005N04NM6SCATMA1 Infineon Technologies

Description: OPTIMOS POWER MOSFETS 25 V - 150, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc), Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1.449mA, Supplier Device Package: PG-WHSON-8-U02, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V.

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IQD005N04NM6SCATMA1 IQD005N04NM6SCATMA1 Hersteller : Infineon Technologies Infineon_IQD005N04NM6SC_DataSheet_v02_01_EN.pdf MOSFETs TRENCH <= 40V
auf Bestellung 3421 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.83 EUR
10+4.49 EUR
100+3.63 EUR
500+3.24 EUR
1000+2.76 EUR
2500+2.66 EUR
5000+2.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IQD005N04NM6SCATMA1 IQD005N04NM6SCATMA1 Hersteller : Infineon Technologies Infineon-IQD005N04NM6SC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c914a3ac8019169effe56544b Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.04 EUR
10+4.65 EUR
100+3.3 EUR
500+3.07 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH