IQD009N06NM5CGATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TTFN-9-U02
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
FET Type: N-Channel
| Anzahl | Preis |
|---|---|
| 3+ | 6.11 EUR |
| 10+ | 4.62 EUR |
| 25+ | 4.25 EUR |
| 100+ | 3.84 EUR |
| 250+ | 3.64 EUR |
| 500+ | 3.53 EUR |
| 1000+ | 3.43 EUR |
| 2500+ | 3.42 EUR |
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Technische Details IQD009N06NM5CGATMA1 Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PG-TTFN-9-U02, Vgs(th) (Max) @ Id: 3.3V @ 163µA, Power Dissipation (Max): 3W (Ta), 333W (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 9-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IQD009N06NM5CGATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IQD009N06NM5CGATMA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 42A 9-Pin TTFN EP T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IQD009N06NM5CGATMA1 | Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TTFN-9-U02 Vgs(th) (Max) @ Id: 3.3V @ 163µA Power Dissipation (Max): 3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IQD009N06NM5CGATMA1 | Infineon Technologies |
MOSFETs IFX FET 60V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IQD009N06NM5CGATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 42A 9-Pin TTFN EP T/R
Trans MOSFET N-CH 60V 42A 9-Pin TTFN EP T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IQD009N06NM5CGATMA1 |
|
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TTFN-9-U02
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerTDFN
Packaging: Tape & Reel (TR)
Description: OPTIMOS 6 POWER-TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TTFN-9-U02
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IQD009N06NM5CGATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs IFX FET 60V
MOSFETs IFX FET 60V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH