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IQD016N08NM5SCATMA1

IQD016N08NM5SCATMA1 Infineon Technologies

Infineon-IQD016N08NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6dff5a3603c Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 4527 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.76 EUR
10+6.07 EUR
100+4.91 EUR
500+4.26 EUR
1000+4.21 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IQD016N08NM5SCATMA1 Infineon Technologies

Description: OPTIMOS POWER MOSFETS 25 V - 150, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc), Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 159µA, Supplier Device Package: PG-WHSON-8-U02, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V.

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IQD016N08NM5SCATMA1 IQD016N08NM5SCATMA1 Hersteller : Infineon Technologies Infineon_09_04_2024_DS_IQD016N08NM5SC_2_0-3500659.pdf MOSFETs TRENCH 40<-<100V
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.83 EUR
10+6.56 EUR
25+6.2 EUR
100+5.3 EUR
250+5.02 EUR
500+4.72 EUR
1000+4.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IQD016N08NM5SCATMA1 IQD016N08NM5SCATMA1 Hersteller : Infineon Technologies Infineon-IQD016N08NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6dff5a3603c Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
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Im Einkaufswagen  Stück im Wert von  UAH