auf Bestellung 1802 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.81 EUR |
| 10+ | 4.56 EUR |
| 100+ | 3.78 EUR |
| 500+ | 3.31 EUR |
| 1000+ | 3.27 EUR |
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Technische Details IQD020N10NM5ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc), Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 159µA, Supplier Device Package: PG-TSON-8-9, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V.
Weitere Produktangebote IQD020N10NM5ATMA1 nach Preis ab 3.03 EUR bis 7.3 EUR
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IQD020N10NM5ATMA1 | Hersteller : Infineon Technologies |
 Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-TSON-8-9 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V |
auf Bestellung 4885 Stücke: Lieferzeit 10-14 Tag (e) |
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| IQD020N10NM5ATMA1 | Hersteller : Infineon Technologies |
N-channel Power MOSFET |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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| IQD020N10NM5ATMA1 | Hersteller : Infineon Technologies |
N-channel Power MOSFET |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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| IQD020N10NM5ATMA1 | Hersteller : Infineon Technologies |
N-channel Power MOSFET |
Produkt ist nicht verfügbar |
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| IQD020N10NM5ATMA1 | Hersteller : Infineon Technologies |
N-channel Power MOSFET |
Produkt ist nicht verfügbar |
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IQD020N10NM5ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-TSON-8-9 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V |
Produkt ist nicht verfügbar |