IQD063N15NM5CGSCATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 3.85 EUR |
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Technische Details IQD063N15NM5CGSCATMA1 Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150, Packaging: Tape & Reel (TR), Package / Case: 9-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc), Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 159µA, Supplier Device Package: PG-WHTFN-9-U02, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V.
Weitere Produktangebote IQD063N15NM5CGSCATMA1 nach Preis ab 3.94 EUR bis 6.99 EUR
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IQD063N15NM5CGSCATMA1 | Hersteller : Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 4563 Stücke: Lieferzeit 10-14 Tag (e) |
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IQD063N15NM5CGSCATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150 Packaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc) Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 159µA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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IQD063N15NM5CGSCATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 150V 14.4A 9-Pin WHTFN EP T/R |
Produkt ist nicht verfügbar |
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IQD063N15NM5CGSCATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 150V 14.4A 9-Pin WHTFN EP T/R |
Produkt ist nicht verfügbar |