auf Bestellung 3978 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.25 EUR |
| 10+ | 5.26 EUR |
| 25+ | 4.96 EUR |
| 100+ | 4.26 EUR |
| 250+ | 4.03 EUR |
| 500+ | 3.78 EUR |
| 1000+ | 3.24 EUR |
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Technische Details IQDH29NE2LM5CGATMA1 Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR, Packaging: Tape & Reel (TR), Package / Case: 9-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc), Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 278W (Tc), Vgs(th) (Max) @ Id: 2V @ 1.448mA, Supplier Device Package: PG-TTFN-9-U02, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V.
Weitere Produktangebote IQDH29NE2LM5CGATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IQDH29NE2LM5CGATMA1 | Hersteller : Infineon Technologies |
 Description: OPTIMOS 6 POWER-TRANSISTORPackaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc) Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.448mA Supplier Device Package: PG-TTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V |
Produkt ist nicht verfügbar |
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| IQDH29NE2LM5CGATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR Packaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc) Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.448mA Supplier Device Package: PG-TTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V |
Produkt ist nicht verfügbar |