auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.12 EUR |
| 10+ | 5.14 EUR |
| 25+ | 4.84 EUR |
| 100+ | 4.15 EUR |
| 250+ | 3.92 EUR |
| 500+ | 3.70 EUR |
| 1000+ | 3.15 EUR |
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Technische Details IQDH29NE2LM5CGSCATMA1 Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150, Packaging: Tape & Reel (TR), Package / Case: 9-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc), Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 278W (Tc), Vgs(th) (Max) @ Id: 2V @ 1.448mA, Supplier Device Package: PG-WHTFN-9-U02, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V.
Weitere Produktangebote IQDH29NE2LM5CGSCATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IQDH29NE2LM5CGSCATMA1 | Hersteller : Infineon Technologies |
 Description: OPTIMOS POWER MOSFETS 25 V - 150Packaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc) Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.448mA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V |
Produkt ist nicht verfügbar |
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IQDH29NE2LM5CGSCATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150 Packaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc) Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.448mA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V |
Produkt ist nicht verfügbar |