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IQDH29NE2LM5SCATMA1

IQDH29NE2LM5SCATMA1 Infineon Technologies

Infineon-IQDH29NE2LM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c08fdf0c1c Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
auf Bestellung 4963 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.02 EUR
10+4.65 EUR
100+3.93 EUR
500+3.16 EUR
1000+2.80 EUR
Mindestbestellmenge: 3
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Technische Details IQDH29NE2LM5SCATMA1 Infineon Technologies

Description: OPTIMOS POWER MOSFETS 25 V - 150, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc), Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 278W (Tc), Vgs(th) (Max) @ Id: 2V @ 1.448mA, Supplier Device Package: PG-WHSON-8-U02, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V.

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IQDH29NE2LM5SCATMA1 IQDH29NE2LM5SCATMA1 Hersteller : Infineon Technologies Infineon_09_04_2024_DS_IQDH29NE2LM5SC_2_0-3500621.pdf MOSFETs TRENCH <= 40V
auf Bestellung 5000 Stücke:
Lieferzeit 375-379 Tag (e)
Anzahl Preis
1+6.14 EUR
10+5.16 EUR
25+4.86 EUR
100+4.17 EUR
250+3.92 EUR
500+3.70 EUR
1000+3.17 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IQDH29NE2LM5SCATMA1 IQDH29NE2LM5SCATMA1 Hersteller : Infineon Technologies Infineon-IQDH29NE2LM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c08fdf0c1c Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
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Im Einkaufswagen  Stück im Wert von  UAH