IQDH29NE2LM5SCATMA1 Infineon Technologies

Description: OPTIMOS POWER MOSFETS 25 V - 150, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc), Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 278W (Tc), Vgs(th) (Max) @ Id: 2V @ 1.448mA, Supplier Device Package: PG-WHSON-8-U02, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V.