IQE004NE1LM7CGATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
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Technische Details IQE004NE1LM7CGATMA1 Infineon Technologies
Description: TRENCH .
Weitere Produktangebote IQE004NE1LM7CGATMA1 nach Preis ab 1.83 EUR bis 4.1 EUR
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IQE004NE1LM7CGATMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-TTFN-9-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V |
auf Bestellung 9980 Stücke: Lieferzeit 10-14 Tag (e) |
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| IQE004NE1LM7CGATMA1 | Infineon Technologies |
MOSFET TRENCH <= 40V |
auf Bestellung 4879 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IQE004NE1LM7CGATMA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.07 EUR |
| 10+ | 3.38 EUR |
| 100+ | 2.69 EUR |
| 500+ | 2.28 EUR |
| 1000+ | 1.93 EUR |
| 2000+ | 1.83 EUR |
| IQE004NE1LM7CGATMA1 |
|
Hersteller: Infineon Technologies
MOSFET TRENCH <= 40V
MOSFET TRENCH <= 40V
auf Bestellung 4879 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.1 EUR |
| 10+ | 3.4 EUR |
| 100+ | 2.69 EUR |
| 250+ | 2.48 EUR |
| 500+ | 2.25 EUR |
| 1000+ | 1.94 EUR |
| 2500+ | 1.83 EUR |