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IQE006NE2LM5CGSCATMA1

IQE006NE2LM5CGSCATMA1 Infineon Technologies

Infineon-IQE006NE2LM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181c82701863e47 Hersteller: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
auf Bestellung 4468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.38 EUR
10+ 3.65 EUR
100+ 2.9 EUR
500+ 2.46 EUR
1000+ 2.08 EUR
2000+ 1.98 EUR
Mindestbestellmenge: 5
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Technische Details IQE006NE2LM5CGSCATMA1 Infineon Technologies

Description: OPTIMOS LOWVOLTAGE POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 9-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc), Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-WHTFN-9-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V.

Weitere Produktangebote IQE006NE2LM5CGSCATMA1 nach Preis ab 2.94 EUR bis 6.53 EUR

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Preis ohne MwSt
IQE006NE2LM5CGSCATMA1 IQE006NE2LM5CGSCATMA1 Hersteller : Infineon Technologies Infineon_IQE006NE2LM5CGSC_DataSheet_v02_00_EN-3073855.pdf MOSFET TRENCH <= 40V
auf Bestellung 358 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.53 EUR
10+ 5.43 EUR
100+ 4.32 EUR
250+ 3.98 EUR
500+ 3.64 EUR
1000+ 3.12 EUR
2500+ 2.94 EUR
Mindestbestellmenge: 8
IQE006NE2LM5CGSCATMA1 IQE006NE2LM5CGSCATMA1 Hersteller : Infineon Technologies Infineon-IQE006NE2LM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181c82701863e47 Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
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