auf Bestellung 518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.22 EUR |
10+ | 3.52 EUR |
100+ | 2.8 EUR |
250+ | 2.69 EUR |
500+ | 2.36 EUR |
1000+ | 1.92 EUR |
5000+ | 1.85 EUR |
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Technische Details IQE008N03LM5ATMA1 Infineon Technologies
N Channel Power Mosfet.
Weitere Produktangebote IQE008N03LM5ATMA1 nach Preis ab 2.02 EUR bis 4.26 EUR
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IQE008N03LM5ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH <= 40V PG-TSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSON-8-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V |
auf Bestellung 1830 Stücke: Lieferzeit 10-14 Tag (e) |
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IQE008N03LM5ATMA1 | Hersteller : Infineon Technologies | N Channel Power Mosfet |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IQE008N03LM5ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH <= 40V PG-TSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSON-8-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V |
Produkt ist nicht verfügbar |