auf Bestellung 814 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.21 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.85 EUR |
| 250+ | 2.71 EUR |
| 500+ | 2.41 EUR |
| 1000+ | 2.01 EUR |
| 5000+ | 1.94 EUR |
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Technische Details IQE013N04LM6CGATMA1 Infineon Technologies
Description: 40V N-CH FET SOURCE-DOWN CG 3X3, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc), Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 2V @ 51µA, Supplier Device Package: PG-TTFN-9-1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V.
Weitere Produktangebote IQE013N04LM6CGATMA1 nach Preis ab 1.98 EUR bis 4.4 EUR
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IQE013N04LM6CGATMA1 | Hersteller : Infineon Technologies |
 Description: 40V N-CH FET SOURCE-DOWN CG 3X3Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 51µA Supplier Device Package: PG-TTFN-9-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V |
auf Bestellung 4919 Stücke: Lieferzeit 10-14 Tag (e) |
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IQE013N04LM6CGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 31A 9-Pin TTFN EP T/R |
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IQE013N04LM6CGATMA1 | Hersteller : Infineon Technologies |
Description: 40V N-CH FET SOURCE-DOWN CG 3X3 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 51µA Supplier Device Package: PG-TTFN-9-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V |
Produkt ist nicht verfügbar |