auf Bestellung 5000 Stücke:
Lieferzeit 150-154 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.08 EUR |
10+ | 3.4 EUR |
100+ | 2.69 EUR |
250+ | 2.48 EUR |
500+ | 2.25 EUR |
1000+ | 1.95 EUR |
2500+ | 1.85 EUR |
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Technische Details IQE022N06LM5ATMA1 Infineon Technologies
Trans MOSFET N-CH 60V 24A 8-Pin TSON EP T/R.
Weitere Produktangebote IQE022N06LM5ATMA1 nach Preis ab 1.85 EUR bis 4.1 EUR
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IQE022N06LM5ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 48µA Supplier Device Package: PG-TSON-8-5 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V |
auf Bestellung 4970 Stücke: Lieferzeit 10-14 Tag (e) |
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IQE022N06LM5ATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 24A 8-Pin TSON EP T/R |
Produkt ist nicht verfügbar |
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IQE022N06LM5ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 48µA Supplier Device Package: PG-TSON-8-5 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V |
Produkt ist nicht verfügbar |