IQE031N08LM6CGSCATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
auf Bestellung 5515 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.03 EUR |
| 10+ | 3.79 EUR |
| 25+ | 3.47 EUR |
| 100+ | 3.13 EUR |
| 250+ | 2.96 EUR |
| 500+ | 2.87 EUR |
| 1000+ | 2.78 EUR |
| 2500+ | 2.7 EUR |
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Technische Details IQE031N08LM6CGSCATMA1 Infineon Technologies
MOSFETs OptiMOS 6 Power-Transistor, 80 V.
Weitere Produktangebote IQE031N08LM6CGSCATMA1 nach Preis ab 2.6 EUR bis 7.06 EUR
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IQE031N08LM6CGSCATMA1 | Hersteller : Infineon Technologies |
MOSFETs OptiMOS 6 Power-Transistor, 80 V |
auf Bestellung 6260 Stücke: Lieferzeit 10-14 Tag (e) |
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IQE031N08LM6CGSCATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc) Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50.8µA Supplier Device Package: PG-WHTFN-9 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V |
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