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IQE050N08NM5SCATMA1

IQE050N08NM5SCATMA1 Infineon Technologies

Infineon_IQE050N08NM5SC_DataSheet_v02_00_EN-3073793.pdf Hersteller: Infineon Technologies
MOSFETs TRENCH 40<-<100V
auf Bestellung 5071 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.42 EUR
10+3.45 EUR
100+2.52 EUR
500+2.25 EUR
1000+2.20 EUR
2500+2.18 EUR
6000+2.15 EUR
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Technische Details IQE050N08NM5SCATMA1 Infineon Technologies

Description: OPTIMOS LOWVOLTAGE POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 49µA, Supplier Device Package: PG-WHSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V.

Weitere Produktangebote IQE050N08NM5SCATMA1 nach Preis ab 2.03 EUR bis 5.58 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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IQE050N08NM5SCATMA1 IQE050N08NM5SCATMA1 Hersteller : Infineon Technologies Infineon-IQE050N08NM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ce4db68b016e Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
auf Bestellung 4997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.58 EUR
10+3.88 EUR
100+2.72 EUR
500+2.22 EUR
1000+2.06 EUR
2000+2.03 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IQE050N08NM5SCATMA1 Hersteller : Infineon Technologies infineon-iqe050n08nm5sc-datasheet-v02_00-en.pdf Trans MOSFET N-CH 80V 16A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE050N08NM5SCATMA1 IQE050N08NM5SCATMA1 Hersteller : Infineon Technologies Infineon-IQE050N08NM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ce4db68b016e Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH