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IQE065N10NM5ATMA1

IQE065N10NM5ATMA1 Infineon Technologies

Infineon-IQE065N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c9c33bb0dae Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+2.17 EUR
Mindestbestellmenge: 5000
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Technische Details IQE065N10NM5ATMA1 Infineon Technologies

Description: TRENCH >=100V PG-TSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 48µA, Supplier Device Package: PG-TSON-8-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V.

Weitere Produktangebote IQE065N10NM5ATMA1 nach Preis ab 2.17 EUR bis 4.61 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IQE065N10NM5ATMA1 IQE065N10NM5ATMA1 Hersteller : Infineon Technologies Infineon-IQE065N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c9c33bb0dae Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 28330 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.26 EUR
10+ 2.74 EUR
100+ 2.22 EUR
500+ 2.17 EUR
Mindestbestellmenge: 6
IQE065N10NM5ATMA1 IQE065N10NM5ATMA1 Hersteller : Infineon Technologies Infineon_IQE065N10NM5_DataSheet_v02_01_EN-2942401.pdf MOSFET TRENCH >=100V
auf Bestellung 4770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.61 EUR
10+ 3.87 EUR
25+ 3.77 EUR
100+ 3.15 EUR
250+ 3.04 EUR
500+ 2.8 EUR
1000+ 2.25 EUR
IQE065N10NM5ATMA1 Hersteller : Infineon Technologies infineon-iqe065n10nm5-datasheet-v02_01-en.pdf SP005399446
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