IQE065N10NM5CGSCATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 5.58 EUR |
| 10+ | 3.64 EUR |
| 100+ | 2.53 EUR |
| 500+ | 2.08 EUR |
| 1000+ | 2.06 EUR |
| 6000+ | 1.92 EUR |
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Technische Details IQE065N10NM5CGSCATMA1 Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 9-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-WHTFN-9-1, Vgs(th) (Max) @ Id: 3.8V @ 48µA, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote IQE065N10NM5CGSCATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IQE065N10NM5CGSCATMA1 | Infineon Technologies |
 Description: OPTIMOS LOWVOLTAGE POWER MOSFETOperating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-WHTFN-9-1 Vgs(th) (Max) @ Id: 3.8V @ 48µA Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IQE065N10NM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-WHTFN-9-1 Vgs(th) (Max) @ Id: 3.8V @ 48µA Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerWDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IQE065N10NM5CGSCATMA1 |
|
Hersteller: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-WHTFN-9-1
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-WHTFN-9-1
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IQE065N10NM5CGSCATMA1 |
|
Hersteller: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-WHTFN-9-1
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Cut Tape (CT)
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-WHTFN-9-1
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH