auf Bestellung 5000 Stücke:
Lieferzeit 192-196 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.84 EUR |
| 10+ | 4.08 EUR |
| 25+ | 3.85 EUR |
| 100+ | 3.29 EUR |
| 250+ | 3.12 EUR |
| 500+ | 2.92 EUR |
| 1000+ | 2.5 EUR |
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Technische Details IQE220N15NM5CGATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 9-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 10V, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 46µA, Supplier Device Package: PG-TTFN-9-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V.
Weitere Produktangebote IQE220N15NM5CGATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| IQE220N15NM5CGATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 150V 7A 9-Pin TTFN EP T/R |
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IQE220N15NM5CGATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 46µA Supplier Device Package: PG-TTFN-9-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V |
Produkt ist nicht verfügbar |
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IQE220N15NM5CGATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 46µA Supplier Device Package: PG-TTFN-9-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V |
Produkt ist nicht verfügbar |