IQE220N15NM5CGATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 5.02 EUR |
| 10+ | 3.26 EUR |
| 100+ | 2.25 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.78 EUR |
| 2500+ | 1.71 EUR |
| 5000+ | 1.65 EUR |
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Technische Details IQE220N15NM5CGATMA1 Infineon Technologies
Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TTFN-9-3, Vgs(th) (Max) @ Id: 4.6V @ 46µA, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 9-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IQE220N15NM5CGATMA1 nach Preis ab 1.61 EUR bis 5.07 EUR
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IQE220N15NM5CGATMA1 | Infineon Technologies |
 Description: TRENCH >=100VPackaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TTFN-9-3 Vgs(th) (Max) @ Id: 4.6V @ 46µA Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerTDFN |
auf Bestellung 4970 Stücke: Lieferzeit 10-14 Tag (e) |
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| IQE220N15NM5CGATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TTFN-9-3
Vgs(th) (Max) @ Id: 4.6V @ 46µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerTDFN
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TTFN-9-3
Vgs(th) (Max) @ Id: 4.6V @ 46µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerTDFN
auf Bestellung 4970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.07 EUR |
| 10+ | 3.28 EUR |
| 100+ | 2.27 EUR |
| 500+ | 1.84 EUR |
| 1000+ | 1.7 EUR |
| 2000+ | 1.61 EUR |