IQE220N15NM5CGSCATMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.41 EUR |
| 10+ | 4.86 EUR |
| 100+ | 3.42 EUR |
| 500+ | 2.89 EUR |
| 1000+ | 2.75 EUR |
| 2500+ | 2.56 EUR |
| 6000+ | 2.24 EUR |
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Technische Details IQE220N15NM5CGSCATMA1 Infineon Technologies
Description: MOSFET N-CH 150V 9WHTFN, Supplier Device Package: PG-WHTFN-9, Package / Case: 9-PowerWDFN, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 150V, Technology: MOSFET (Metal Oxide), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount.
Weitere Produktangebote IQE220N15NM5CGSCATMA1 nach Preis ab 3.68 EUR bis 9.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IQE220N15NM5CGSCATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 150V 9WHTFNPackaging: Cut Tape (CT) Supplier Device Package: PG-WHTFN-9 Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 9-PowerWDFN |
auf Bestellung 5940 Stücke: Lieferzeit 10-14 Tag (e) |
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| IQE220N15NM5CGSCATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 9WHTFN
Packaging: Cut Tape (CT)
Supplier Device Package: PG-WHTFN-9
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Description: MOSFET N-CH 150V 9WHTFN
Packaging: Cut Tape (CT)
Supplier Device Package: PG-WHTFN-9
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
auf Bestellung 5940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.04 EUR |
| 10+ | 5.97 EUR |
| 100+ | 4.24 EUR |
| 500+ | 3.68 EUR |