IQE220N15NM5SCATMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.51 EUR |
| 10+ | 4.25 EUR |
| 100+ | 2.98 EUR |
| 500+ | 2.4 EUR |
| 1000+ | 2.39 EUR |
| 2500+ | 2.31 EUR |
| 6000+ | 2.24 EUR |
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Technische Details IQE220N15NM5SCATMA1 Infineon Technologies
Description: MOSFET N-CH 150V 8WHSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 26A, 10V, Vgs(th) (Max) @ Id: 4.6V @ 46µA, Supplier Device Package: PG-WHSON-8-1, FET Type: N-Channel, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V.
Weitere Produktangebote IQE220N15NM5SCATMA1 nach Preis ab 2.7 EUR bis 7.2 EUR
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IQE220N15NM5SCATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 150V 8WHSONPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 4.6V @ 46µA Supplier Device Package: PG-WHSON-8-1 FET Type: N-Channel Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V |
auf Bestellung 4448 Stücke: Lieferzeit 10-14 Tag (e) |
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| IQE220N15NM5SCATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 8WHSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 4.6V @ 46µA
Supplier Device Package: PG-WHSON-8-1
FET Type: N-Channel
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V
Description: MOSFET N-CH 150V 8WHSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 4.6V @ 46µA
Supplier Device Package: PG-WHSON-8-1
FET Type: N-Channel
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V
auf Bestellung 4448 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.2 EUR |
| 10+ | 4.7 EUR |
| 100+ | 3.3 EUR |
| 500+ | 2.7 EUR |