IQEH46NE2LM7UCGSCATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IQEH46NE2LM7UCGSCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.46mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
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Technische Details IQEH46NE2LM7UCGSCATMA1 Infineon Technologies
Description: IQEH46NE2LM7UCGSCATMA1, Packaging: Tape & Reel (TR), Package / Case: 9-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 440A (Tc), Rds On (Max) @ Id, Vgs: 0.46mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 2V @ 432µA, Supplier Device Package: PG-WHTFN-9-1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V.
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IQEH46NE2LM7UCGSCATMA1 | Hersteller : Infineon Technologies |
Description: IQEH46NE2LM7UCGSCATMA1 Packaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 440A (Tc) Rds On (Max) @ Id, Vgs: 0.46mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-WHTFN-9-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V |
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