IQEH46NE2LM7UCGSCATMA1 INFINEON
Hersteller: INFINEON
Description: INFINEON - IQEH46NE2LM7UCGSCATMA1 - Leistungs-MOSFET, n-Kanal, 25 V, 440 A, 0.00046 ohm, WHTFN-EP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 25V
rohsCompliant: YES
Dauer-Drainstrom Id: 440A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 150W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: WHTFN-EP
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 7 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.00046ohm
| Anzahl | Privatkunde |
|---|---|
| 32+ | 8.04 EUR |
| 48+ | 4.88 EUR |
| 100+ | 3.53 EUR |
| 500+ | 2.94 EUR |
| 1000+ | 2.62 EUR |
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Technische Details IQEH46NE2LM7UCGSCATMA1 INFINEON
Description: INFINEON - IQEH46NE2LM7UCGSCATMA1 - Leistungs-MOSFET, n-Kanal, 25 V, 440 A, 0.00046 ohm, WHTFN-EP, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 25V, rohsCompliant: YES, Dauer-Drainstrom Id: 440A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 2V, Verlustleistung: 150W, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: WHTFN-EP, Anzahl der Pins: 9Pin(s), Produktpalette: OptiMOS 7 Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.00046ohm.
Weitere Produktangebote IQEH46NE2LM7UCGSCATMA1 nach Preis ab 3.08 EUR bis 8.63 EUR
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IQEH46NE2LM7UCGSCATMA1 | Infineon Technologies |
Description: IQEH46NE2LM7UCGSCATMA1 Packaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 440A (Tc) Rds On (Max) @ Id, Vgs: 0.46mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-WHTFN-9-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V |
auf Bestellung 2847 Stücke: Lieferzeit 10-14 Tag (e) |
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IQEH46NE2LM7UCGSCATMA1 | Infineon Technologies |
MOSFETs OptiMOS 7 Power Transistor, 25 V |
auf Bestellung 3969 Stücke: Lieferzeit 10-14 Tag (e) |
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| IQEH46NE2LM7UCGSCATMA1 |
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Hersteller: Infineon Technologies
Description: IQEH46NE2LM7UCGSCATMA1
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.46mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
Description: IQEH46NE2LM7UCGSCATMA1
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.46mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
auf Bestellung 2847 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.38 EUR |
| 10+ | 5.52 EUR |
| 50+ | 4.3 EUR |
| 100+ | 3.9 EUR |
| 500+ | 3.32 EUR |
| IQEH46NE2LM7UCGSCATMA1 |
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Hersteller: Infineon Technologies
MOSFETs OptiMOS 7 Power Transistor, 25 V
MOSFETs OptiMOS 7 Power Transistor, 25 V
auf Bestellung 3969 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.63 EUR |
| 10+ | 5.65 EUR |
| 100+ | 4.21 EUR |
| 500+ | 3.53 EUR |
| 1000+ | 3.28 EUR |
| 2500+ | 3.08 EUR |