IQEH46NE2LM7ZCGSCATMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.51 EUR |
| 10+ | 4.88 EUR |
| 100+ | 3.42 EUR |
| 500+ | 2.87 EUR |
| 1000+ | 2.67 EUR |
| 2500+ | 2.49 EUR |
| 6000+ | 2.26 EUR |
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Technische Details IQEH46NE2LM7ZCGSCATMA1 Infineon Technologies
MOSFETs OptiMOS 7 Power -Transistor, 25 V.
Weitere Produktangebote IQEH46NE2LM7ZCGSCATMA1 nach Preis ab 3.24 EUR bis 8.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IQEH46NE2LM7ZCGSCATMA1 | Infineon Technologies |
 Description: TRENCH <= 40VPackaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc) Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 1.7V @ 432µA Supplier Device Package: PG-WHTFN-9-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V |
auf Bestellung 5653 Stücke: Lieferzeit 10-14 Tag (e) |
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| IQEH46NE2LM7ZCGSCATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
auf Bestellung 5653 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.23 EUR |
| 10+ | 5.41 EUR |
| 100+ | 3.81 EUR |
| 500+ | 3.24 EUR |