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IQFH36N04NM6ATMA1

IQFH36N04NM6ATMA1 Infineon Technologies


Hersteller: Infineon Technologies
Description: IQFH36N04NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 656A (Tc)
Rds On (Max) @ Id, Vgs: 0.36mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 309 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 20 V
auf Bestellung 1476 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.54 EUR
5+7.67 EUR
10+7.35 EUR
25+6.96 EUR
50+6.70 EUR
100+6.46 EUR
500+5.97 EUR
1000+5.79 EUR
Mindestbestellmenge: 3
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Technische Details IQFH36N04NM6ATMA1 Infineon Technologies

Description: IQFH36N04NM6ATMA1, Packaging: Tape & Reel (TR), Package / Case: 12-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 656A (Tc), Rds On (Max) @ Id, Vgs: 0.36mOhm @ 100A, 10V, Power Dissipation (Max): 3W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1.05mA, Supplier Device Package: PG-TSON-12-1, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 309 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 20 V.

Weitere Produktangebote IQFH36N04NM6ATMA1 nach Preis ab 5.28 EUR bis 10.89 EUR

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IQFH36N04NM6ATMA1 IQFH36N04NM6ATMA1 Hersteller : Infineon Technologies Infineon_IQFH36N04NM6_DataSheet_v02_00_EN-3476473.pdf MOSFETs TRENCH <= 40V
auf Bestellung 4070 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.89 EUR
10+9.17 EUR
100+7.41 EUR
500+6.58 EUR
1000+6.23 EUR
3000+5.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IQFH36N04NM6ATMA1 IQFH36N04NM6ATMA1 Hersteller : Infineon Technologies Description: IQFH36N04NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 656A (Tc)
Rds On (Max) @ Id, Vgs: 0.36mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 309 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 20 V
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Im Einkaufswagen  Stück im Wert von  UAH