IQFH36N04NM6ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IQFH36N04NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 656A (Tc)
Rds On (Max) @ Id, Vgs: 0.36mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 309 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 20 V
Description: IQFH36N04NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 656A (Tc)
Rds On (Max) @ Id, Vgs: 0.36mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 309 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 20 V
auf Bestellung 1476 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.54 EUR |
| 5+ | 7.67 EUR |
| 10+ | 7.35 EUR |
| 25+ | 6.96 EUR |
| 50+ | 6.7 EUR |
| 100+ | 6.46 EUR |
| 500+ | 5.97 EUR |
| 1000+ | 5.79 EUR |
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Technische Details IQFH36N04NM6ATMA1 Infineon Technologies
Description: IQFH36N04NM6ATMA1, Packaging: Tape & Reel (TR), Package / Case: 12-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 656A (Tc), Rds On (Max) @ Id, Vgs: 0.36mOhm @ 100A, 10V, Power Dissipation (Max): 3W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1.05mA, Supplier Device Package: PG-TSON-12-1, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 309 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 20 V.
Weitere Produktangebote IQFH36N04NM6ATMA1 nach Preis ab 5.02 EUR bis 10.33 EUR
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IQFH36N04NM6ATMA1 | Hersteller : Infineon Technologies |
 MOSFETs TRENCH <= 40V |
auf Bestellung 2729 Stücke: Lieferzeit 10-14 Tag (e) |
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IQFH36N04NM6ATMA1 | Hersteller : Infineon Technologies |
Description: IQFH36N04NM6ATMA1 Packaging: Tape & Reel (TR) Package / Case: 12-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 656A (Tc) Rds On (Max) @ Id, Vgs: 0.36mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1.05mA Supplier Device Package: PG-TSON-12-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 309 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 20 V |
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