IQFH61N06NM5ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 510A (Tc)
Rds On (Max) @ Id, Vgs: 0.61mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 247µA
Supplier Device Package: PG-TSON-12
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18100 pF @ 30 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.84 EUR |
| 10+ | 7.33 EUR |
| 100+ | 5.49 EUR |
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Technische Details IQFH61N06NM5ATMA1 Infineon Technologies
Description: TRENCH 40.
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IQFH61N06NM5ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: 12-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 510A (Tc) Rds On (Max) @ Id, Vgs: 0.61mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 247µA Supplier Device Package: PG-TSON-12 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18100 pF @ 30 V |
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