IQFH68N06NM5ATMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.25 EUR |
| 10+ | 8.6 EUR |
| 100+ | 6.97 EUR |
| 500+ | 6.2 EUR |
| 1000+ | 5.3 EUR |
| 3000+ | 4.99 EUR |
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Technische Details IQFH68N06NM5ATMA1 Infineon Technologies
MOSFETs OptiMOS 5 Power-Transistor,60V.
Weitere Produktangebote IQFH68N06NM5ATMA1 nach Preis ab 6.37 EUR bis 13.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IQFH68N06NM5ATMA1 | Infineon Technologies |
 Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: 12-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc) Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 273W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 217µA Supplier Device Package: PG-TSON-12-U01 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V |
auf Bestellung 209 Stücke: Lieferzeit 10-14 Tag (e) |
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| IQFH68N06NM5ATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
auf Bestellung 209 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.04 EUR |
| 10+ | 8.78 EUR |
| 100+ | 6.37 EUR |