IR25606SPBF-INF Infineon Technologies
Hersteller: Infineon Technologies
Description: HALF BRIDGE BASED PERIPHERAL DRI
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 200mA, 350mA
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 150ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
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Technische Details IR25606SPBF-INF Infineon Technologies
Description: HALF BRIDGE BASED PERIPHERAL DRI, DigiKey Programmable: Not Verified, Part Status: Active, Current - Peak Output (Source, Sink): 200mA, 350mA, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk, Logic Voltage - VIL, VIH: 0.8V, 2.9V, Gate Type: IGBT, N-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Independent, Rise / Fall Time (Typ): 150ns, 50ns, Supplier Device Package: 8-SOIC, High Side Voltage - Max (Bootstrap): 600 V, Input Type: Non-Inverting, Voltage - Supply: 10V ~ 20V, Operating Temperature: -40°C ~ 125°C (TJ).

