Technische Details IRC540PBF IR
Description: MOSFET N-CH 100V 28A TO220-5, Packaging: Tube, Package / Case: TO-220-5, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V, FET Feature: Current Sensing, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-5, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V.
Weitere Produktangebote IRC540PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IRC540PBF | Hersteller : IR |
 06+ TSSOP |
auf Bestellung 75 Stücke: Lieferzeit 21-28 Tag (e) |
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IRC540PBF Produktcode: 181576
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IRC540PBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 28A 5-Pin(5+Tab) TO-220 |
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| IRC540PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 28A TO220-5 Packaging: Tube Package / Case: TO-220-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V FET Feature: Current Sensing Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-5 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRC540PBF | Hersteller : Vishay / Siliconix |
MOSFET N-Chan 100V 28 Amp |
Produkt ist nicht verfügbar |