IRD3CH11DB6 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 25A DIE
Current - Reverse Leakage @ Vr: 700 nA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Die
Current - Average Rectified (Io): 25A
Technology: Standard
Reverse Recovery Time (trr): 190 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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Technische Details IRD3CH11DB6 Infineon Technologies
Description: DIODE GEN PURP 1.2KV 25A DIE, Current - Reverse Leakage @ Vr: 700 nA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 25 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Obsolete, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: Die, Current - Average Rectified (Io): 25A, Technology: Standard, Reverse Recovery Time (trr): 190 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk.