IRF100PW219XKSA1 Infineon Technologies
auf Bestellung 179 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.86 EUR |
| 10+ | 5.51 EUR |
| 100+ | 4.45 EUR |
| 480+ | 3.94 EUR |
| 1200+ | 3.4 EUR |
| 2640+ | 3.19 EUR |
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Technische Details IRF100PW219XKSA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 203A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V, Power Dissipation (Max): 3.8W (Ta), 341W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 278µA, Supplier Device Package: PG-TO247-3-U06, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V.
Weitere Produktangebote IRF100PW219XKSA1 nach Preis ab 3.77 EUR bis 8.08 EUR
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IRF100PW219XKSA1 | Hersteller : Infineon Technologies |
 Description: TRENCH >=100VPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 278µA Supplier Device Package: PG-TO247-3-U06 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V |
auf Bestellung 120 Stücke: Lieferzeit 10-14 Tag (e) |
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