Technische Details IRF200S234 Infineon Technologies
Description: IRF200S - 12V-300V N-CHANNEL POW, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A, Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V.
Weitere Produktangebote IRF200S234
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRF200S234 | Hersteller : Infineon |
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auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF200S234 | Hersteller : Infineon Technologies |
Enhancement N Channel MOSFET |
Produkt ist nicht verfügbar |
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IRF200S234 | Hersteller : International Rectifier |
Description: IRF200S - 12V-300V N-CHANNEL POW Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V |
Produkt ist nicht verfügbar |