Technische Details IRF2204PBF Infineon Technologies
Description: MOSFET N-CH 40V 210A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 210A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V.
Weitere Produktangebote IRF2204PBF nach Preis ab 1.59 EUR bis 42.54 EUR
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IRF2204PBF | Infineon Technologies |
  Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2204PBF | Infineon Technologies |
Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2204PBF | Infineon Technologies |
Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2204PBF | Infineon Technologies |
Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2204PBF | Infineon Technologies |
Description: MOSFET N-CH 40V 210A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF2204PBF | Infineon Technologies |
MOSFETs MOSFT 40V 210A 3.6mOhm 130nC |
auf Bestellung 902 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF2204PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 210A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 330W Technology: HEXFET® |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2204PBF | Infineon Technologies |
Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRF2204PBF |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.59 EUR |
| IRF2204PBF |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 98+ | 1.81 EUR |
| IRF2204PBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 224+ | 2.95 EUR |
| IRF2204PBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 575 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 224+ | 2.95 EUR |
| 500+ | 2.62 EUR |
| IRF2204PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 210A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Description: MOSFET N-CH 40V 210A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.01 EUR |
| 50+ | 3 EUR |
| 100+ | 2.71 EUR |
| 500+ | 2.2 EUR |
| IRF2204PBF |
|
Hersteller: Infineon Technologies
MOSFETs MOSFT 40V 210A 3.6mOhm 130nC
MOSFETs MOSFT 40V 210A 3.6mOhm 130nC
auf Bestellung 902 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.26 EUR |
| 10+ | 3 EUR |
| 100+ | 2.43 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.24 EUR |
| 5000+ | 2.12 EUR |
| IRF2204PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 42.54 EUR |
| IRF2204PBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)