Technische Details IRF230 IR
Description: MOSFET N-CH 200V 9A TO3, Packaging: Bag, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V.
Weitere Produktangebote IRF230
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| IRF230 | Hersteller : Semelab (TT electronics) |
 Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 |
Produkt ist nicht verfügbar |
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| IRF230 | Hersteller : Semelab |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 |
Produkt ist nicht verfügbar |
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IRF230 | Hersteller : Harris Corporation |
Description: MOSFET N-CH 200V 9A TO3 Packaging: Bag Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF230 | Hersteller : Semelab / TT Electronics |
MOSFET POWER |
Produkt ist nicht verfügbar |