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IRF2804S-7PPBF

IRF2804S-7PPBF Infineon Technologies


irf2804s-7ppbf.pdf?fileId=5546d462533600a4015355de8a0e18e9 Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 25 V
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Technische Details IRF2804S-7PPBF Infineon Technologies

Description: MOSFET N-CH 40V 160A D2PAK, Packaging: Tube, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK (7-Lead), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 25 V.

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IRF2804S-7PPBF IRF2804S-7PPBF Hersteller : Infineon / IR Infineon_IRF2804S_7P_DataSheet_v01_01_EN-1227977.pdf MOSFET 40V 1 N-CH HEXFET 1.6mOhms 170nC
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