IRF2807Z International Rectifier
Hersteller: International RectifierN-MOSFET HEXFET 75V 89A 170W 0,0094Ω IRF2807Z TIRF2807z
Anzahl je Verpackung: 10 Stücke
auf Bestellung 147 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 4.36 EUR |
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Technische Details IRF2807Z International Rectifier
Description: MOSFET N-CH 75V 75A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 53A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V.
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IRF2807Z Produktcode: 46772
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Transistoren > MOSFET N-CH Gehäuse: TO-220 JHGF: THT |
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IRF2807Z | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 53A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V |
Produkt ist nicht verfügbar |