IRF3007PBF Infineon Technologies
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 110+ | 1.43 EUR |
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Technische Details IRF3007PBF Infineon Technologies
Description: MOSFET N-CH 75V 75A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V.
Weitere Produktangebote IRF3007PBF nach Preis ab 1.26 EUR bis 4.89 EUR
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IRF3007PBF | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 75V 75A TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V |
auf Bestellung 4927 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3007PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 75V 80A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3007PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: THT Gate charge: 89nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 57 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF3007PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: THT Gate charge: 89nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3007PBF | Hersteller : Infineon Technologies |
MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC |
auf Bestellung 104 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF3007PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 75V 80A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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IRF3007PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V |
Produkt ist nicht verfügbar |