IRF3007PBF Infineon Technologies
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 289+ | 1.88 EUR |
| 500+ | 1.63 EUR |
| 1000+ | 1.45 EUR |
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Technische Details IRF3007PBF Infineon Technologies
Description: MOSFET N-CH 75V 75A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V.
Weitere Produktangebote IRF3007PBF nach Preis ab 1.45 EUR bis 3.31 EUR
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IRF3007PBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 75V 80A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 2450 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3007PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 75A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V |
auf Bestellung 4927 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3007PBF | Hersteller : Infineon Technologies |
MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC |
auf Bestellung 104 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3007PBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRF3007PBF - IRF3007 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3007PBF | Hersteller : International Rectifier HiRel Products |
Trans MOSFET N-CH Si 75V 80A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3007PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 75V 80A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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IRF3007PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V |
Produkt ist nicht verfügbar |