IRF3205ZPBFXKMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 5+ | 3.61 EUR |
| 50+ | 1.75 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.25 EUR |
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Technische Details IRF3205ZPBFXKMA1 Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V.
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 78A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
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