IRF341 Harris Corporation
Hersteller: Harris CorporationDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
auf Bestellung 3034 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 204+ | 2.28 EUR |
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Technische Details IRF341 Harris Corporation
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 5.2A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V.
Weitere Produktangebote IRF341 nach Preis ab 2.03 EUR bis 2.44 EUR
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IRF341 | Hersteller : International Rectifier |
Description: IRF341 - 10A, 350V, N-CHANNEL, P Packaging: Bulk |
auf Bestellung 2744 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF341 | Hersteller : HARRIS |
IRF341 |
auf Bestellung 2534 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF341 | Hersteller : Infineon / IR |
MOSFET |
Produkt ist nicht verfügbar |